Influence of the grain boundary barrier height on the electrical properties of Gallium doped ZnO thin films

被引：46
|
作者：
Yu, Chang-Feng [1 ]
Chen, Sy-Hann [1 ]
Sun, Shih-Jye [2 ]
Chou, Hsiung [3 ,4 ]
机构：
[1] Natl Chiayi Univ, Dept Electrophys, Chiayi 60004, Taiwan
[2] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 811, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[4] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan
来源：
APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 15期
关键词：
Pulsed laser deposition; Gallium doped zinc oxide; Quantum size effect; Barrier height; PULSED-LASER DEPOSITION; ZINC-OXIDE FILMS; TRANSPARENT CONDUCTING OXIDES; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; SUBSTRATE-TEMPERATURE; OPTICAL-PROPERTIES; ROOM-TEMPERATURE; FLOW RATIO; TRANSMITTANCE;
D O I：
10.1016/j.apsusc.2011.02.051
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The pulsed laser deposition (PLD) technique is used to deposit Gallium doped zinc oxide (GZO) thin films on glass substrates at 250 with different Gallium (Ga) doping concentration of 0, 1.0, 3.0 and 5.0%. The influence of Ga doping concentration on structure, chemical atomic compositions, electrical and optical properties was investigated by XRD, XPS, Hall measurement and UV spectrophotometer, respectively. The relationship between electrical properties and Ga doping concentration was clarified by analyzing the chemical element compositions and the chemical states on the GZO films. It is found that the carrier concentrations and oxygen vacancies in the GZO films increase with increasing Ga doping concentration. The lowest resistivity (3.63 x 10(-4) Omega cm) and barrier height of grain boundaries (14 mV) were obtained with 3% Ga doping. In particular, we suppose the band gap of 5% Ga doping sample larger than that of 3% Ga doping sample is due to the quantum size effect from the amorphous structure rather than Moss-Burstein shift. (C) 2011 Elsevier B. V. All rights reserved.
引用
收藏
页码：6498 / 6502
页数：5
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