Electrical and optical properties of transparent conducting tin doped ZnO thin films

被引：0
|
作者：
Vrushali Shelke
B. K. Sonawane
M. P. Bhole
D. S. Patil
机构：
[1] North Maharashtra University,Department of Electronics
来源：
Journal of Materials Science: Materials in Electronics | 2012年 / 23卷
关键词：
Stannous Chloride; Zinc Acetate Dihydrate; Minimum Resistivity; Envelope Method; Average Optical Transmittance;
D O I：
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中图分类号：
学科分类号：
摘要：
Electrical, optical and structural properties of tin doped ZnO thin films were investigated for various tin (Sn) doping concentrations. Sol gel method was used to deposit the films on microscopic glass slides and silicon substrate. UV–Visible spectrometer analysis showed excellent optically transparent oscillating natures with transparency above 85% in the visible range. Band gap of 3.24 eV was deduced for Sn doping concentration of 4 at% using envelope method. Scanning electron microscopy (SEM) was employed to study the morphology of the films. Crystallinity of the film was investigated by X-Ray diffraction (XRD), which revealed polycrystalline nature with orientation towards c-axis. Resistivity of 3.11 Ω-cm with minimum stress value of 8.11 × 10−3 MPa was measured for Sn doping concentration of 4 at%.
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页码：451 / 456
页数：5
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