Optical and electrical properties of ZnO thin films doped with Al, V and Nb

被引：7
|
作者：
Angelov, Orlin [1 ]
Lovchinov, Konstantin [1 ]
Dimova-Malinovska, Doriana [1 ]
机构：
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4 | 2013年 / 10卷 / 04期
关键词：
ZnO; r.f. magnetron sputtering; transparent conductive oxide; electrical and optical properties;
D O I：
10.1002/pssc.201200559
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study addresses the optical and electrical properties of ZnO thin films doped with Al, V and Nb (ZnO:Al, ZnO:V and ZnO:Nb, respectively) deposited by r.f. magnetron sputtering in Ar atmosphere. The films are deposited on glass substrates without heating and heated at 100 degrees C, 150 degrees C and 275 degrees C. The optical spectra of transmittance and reflectance are measured and the optical band gap of the films is determined. The different films have band gap values in the range of 3.37-3.57 eV. The films have about 90% transmittance and their resistivity is in the range of 8.5-2.0 mO. cm. The influence of doping elements on the optical and electrical characteristics of the obtained thin films is discussed. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：709 / 712
页数：4
相关论文
共 50 条
  • [1] Effect of oxygen flowrate on optical and electrical properties in Al doped ZnO thin films
    Cao, P. J.
    Han, S.
    Liu, W. J.
    Jia, F.
    Zeng, Y. X.
    Zhu, D. L.
    Lu, Y. M.
    MATERIALS TECHNOLOGY, 2014, 29 (06) : 336 - 340
  • [2] Electrical and optical properties of ZnO thin films doped with Nb deposited by rf magnetron sputtering
    Lovchinov, K.
    Angelov, O.
    Dimova-Malinovska, D.
    17TH INTERNATIONAL SUMMER SCHOOL ON VACUUM, ELECTRON, AND ION TECHNOLOGIES (VEIT 2011), 2012, 356
  • [3] Structural, Optical and Electrical Properties of ZnO/Nb/ZnO Multilayer Thin Films
    Nunes Melo, Adolfo Henrique
    Silva, Petrucio Barroso
    Macedo, Marcelo Andrade
    ELECTROCERAMICS VI, 2014, 975 : 238 - 242
  • [4] Electrical and optical properties of in and Al doped ZnO thin film
    Park, Sang-Uk
    Koh, Jung-Hyuk
    ELECTRONIC MATERIALS LETTERS, 2013, 9 (04) : 493 - 496
  • [5] Electrical and optical properties of in and Al doped ZnO thin film
    Sang-Uk Park
    Jung-Hyuk Koh
    Electronic Materials Letters, 2013, 9 : 493 - 496
  • [6] Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films
    CHEN Yanwei1
    2. Key Laboratory of Excited State Processes
    Science China(Physics,Mechanics & Astronomy), 2004, (05) : 588 - 596
  • [7] Effects of growth process on the optical and electrical properties in Al-doped ZnO thin films
    Prabhakar, Tejas
    Dai, Lingling
    Zhang, Lin
    Yang, Rong
    Li, Liwei
    Guo, Ted
    Yan, Yanfa
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (08)
  • [8] Effects of growth process on the optical and electrical properties in Al-doped ZnO thin films
    1600, American Institute of Physics Inc. (115):
  • [9] Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films
    Yanwei Chen
    Wenhua Yu
    Yichun Liu
    Science in China Series G: Physics, Mechanics and Astronomy, 2004, 47 : 588 - 596
  • [10] Effects of annealing on structural, optical and electrical properties of Al-doped ZnO thin films
    Chen, YW
    Yu, WH
    Liu, YC
    SCIENCE IN CHINA SERIES G-PHYSICS MECHANICS & ASTRONOMY, 2004, 47 (05): : 588 - 596
12345