Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces

被引：37
|
作者：
Brennan, Barry [1 ]
Dong, Hong [1 ]
Zhernokletov, Dmitry [1 ]
Kim, Jiyoung [1 ]
Wallace, Robert M. [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
来源：
APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 12期
基金：
美国国家科学基金会;
关键词：
INP(100); SURFACES;
D O I：
10.1143/APEX.4.125701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The interfacial reactions between atomic layer deposited Al2O3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process. With the first cycle of trimethyl aluminum, a significant decrease in the amount of indium oxides present on the surface is seen, consistent with the "clean up'' effect reported for other III-V semiconductor surfaces. However, a concurrent increase in the amount of phosphorous oxide is seen, suggesting oxygen transfer from indium oxides to phosphorous during indium oxide decomposition. (C) 2011 The Japan Society of Applied Physics
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页数：3
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