Surface and Interfacial Reaction Study of Half Cycle Atomic Layer Deposited Al2O3 on Chemically Treated InP Surfaces

The interfacial reactions between atomic layer deposited Al2O3 films on various chemically treated InP(100) surfaces have been investigated by in situ X-ray photoelectron spectroscopy at each half cycle in the deposition process. With the first cycle of trimethyl aluminum, a significant decrease in the amount of indium oxides present on the surface is seen, consistent with the "clean up'' effect reported for other III-V semiconductor surfaces. However, a concurrent increase in the amount of phosphorous oxide is seen, suggesting oxygen transfer from indium oxides to phosphorous during indium oxide decomposition. (C) 2011 The Japan Society of Applied Physics