Proton-Induced Failures in High-Power Field-Effect Transistors

被引：0

作者：

Ivanov, N. A. ^{[1
]}

Mitin, E. V.

Pashuk, V. V.

Tverskoy, M. G.

机构：

[1] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188300, Leningrad Oblas, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 01期

关键词：

Technical Physic Letter; Linear Energy Transfer; Gate Insulator; High Energy Proton; Oxide Film Thickness;

D O I：

10.1134/S1063785011010202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of 1000-MeV protons on high-power metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured using microelectronic technology has been studied. It is established that high-energy proton bombardment leads to breakdown of the gate insulator (oxide) in the MOSFET structure that results in a "catastrophic" failure of the device. A model explaining the appearance of these failures is proposed that is based on the formation of fast residual particles as a result of nuclear reactions between high-energy protons and nuclei of the semiconductor material.

引用

页码：58 / 61

页数：4

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