Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

被引:2
|
作者
Maimon, Ory [1 ,2 ]
Li, Qiliang [1 ,2 ,3 ]
机构
[1] George Mason Univ, Dept Elect Engn, Fairfax, VA 22030 USA
[2] NIST, Nanoscale Device Characterizat Div, Gaithersburg, MD 20899 USA
[3] George Mason Univ, Quantum Sci & Engn Ctr, Fairfax, VA 22030 USA
关键词
gallium oxide; wide-bandgap semiconductor; field-effect transistors (FETs); high power; RF; defects; BETA-GA2O3; SINGLE-CRYSTALS; KV BREAKDOWN; ELECTRICAL-PROPERTIES; THRESHOLD VOLTAGE; OPTICAL-PROPERTIES; LEAKAGE CURRENT; T-GATE; MOSFETS; GROWTH; GAN;
D O I
10.3390/ma16247693
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (beta-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm-1, and Baliga figure of merit of 3300, 3-10 times larger than that of SiC and GaN. Moreover, beta-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of beta-Ga2O3 and beta-(AlxGa1-x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in beta-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in beta-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.
引用
收藏
页数:45
相关论文
共 50 条
  • [1] Gallium nitride high-power transistors for space applications
    Phillips, WA
    Davies, RA
    Jones, SK
    Vanner, KC
    Wadsworth, SD
    Wallis, RH
    [J]. ESCCON 2000: EUROPEAN SPACE COMPONENTS CONFERENCE, PROCEEDINGS, 2000, 439 : 225 - 230
  • [2] Gallium Oxide for High-Power Optical Applications
    Deng, Huiyang
    Leedle, Kenneth J.
    Miao, Yu
    Black, Dylan S.
    Urbanek, Karel E.
    McNeur, Joshua
    Kozak, Martin
    Ceballos, Andrew
    Hommelhoff, Peter
    Solgaard, Olav
    Byer, Robert L.
    Harris, James S.
    [J]. ADVANCED OPTICAL MATERIALS, 2020, 8 (07):
  • [3] Proton-induced failures in high-power field-effect transistors
    N. A. Ivanov
    E. V. Mitin
    V. V. Pashuk
    M. G. Tverskoy
    [J]. Technical Physics Letters, 2011, 37 : 58 - 61
  • [4] Proton-Induced Failures in High-Power Field-Effect Transistors
    Ivanov, N. A.
    Mitin, E. V.
    Pashuk, V. V.
    Tverskoy, M. G.
    [J]. TECHNICAL PHYSICS LETTERS, 2011, 37 (01) : 58 - 61
  • [5] Back-doping design in AlGaN/GaN heterostructure field-effect transistors for high-power applications
    Maeda, N
    Tsubaki, K
    Saitoh, T
    Kobayashi, N
    [J]. GAN AND RELATED ALLOYS-2001, 2002, 693 : 811 - 816
  • [6] Progress Toward Diamond Power Field-Effect Transistors
    Geis, Michael W.
    Wade, Travis C.
    Wuorio, Charles H.
    Fedynyshyn, Theodore H.
    Duncan, Bradley
    Plaut, Maxwell E.
    Varghese, Joseph O.
    Warnock, Shireen M.
    Vitale, Steven A.
    Hollis, Mark A.
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (22):
  • [8] Doping design of GaN-based heterostructure field-effect transistors with high electron density for high-power applications
    Maeda, N
    Tawara, T
    Saitoh, T
    Tsubaki, K
    Kobayashi, N
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 200 (01): : 168 - 174
  • [9] Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications
    Khan, MA
    Simin, G
    Yang, JW
    Zhang, JP
    Koudymov, A
    Shur, MS
    Gaska, R
    Hu, XH
    Tarakji, A
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (02) : 624 - 633
  • [10] Modeling and analysis for thermal management in gallium oxide field-effect transistors
    Yuan, Chao
    Zhang, Yuewei
    Montgomery, Robert
    Kim, Samuel
    Shi, Jingjing
    Mauze, Akhil
    Itoh, Takeki
    Speck, James S.
    Graham, Samuel
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 127 (15)