Proton-induced failures in high-power field-effect transistors

被引：0

作者：

N. A. Ivanov

E. V. Mitin

V. V. Pashuk

M. G. Tverskoy

机构：

[1] Russian Academy of Sciences,Konstantinov Nuclear Physics Institute

[2] RNII Elektronstandart Company,undefined

来源：

Technical Physics Letters | 2011年 / 37卷

关键词：

Technical Physic Letter; Linear Energy Transfer; Gate Insulator; High Energy Proton; Oxide Film Thickness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of 1000-MeV protons on high-power metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured using microelectronic technology has been studied. It is established that high-energy proton bombardment leads to breakdown of the gate insulator (oxide) in the MOSFET structure that results in a “catastrophic” failure of the device. A model explaining the appearance of these failures is proposed that is based on the formation of fast residual particles as a result of nuclear reactions between high-energy protons and nuclei of the semiconductor material.

引用

页码：58 / 61

页数：3

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