Proton-Induced Failures in High-Power Field-Effect Transistors

被引：0
|
作者：
Ivanov, N. A. [1 ]
Mitin, E. V.
Pashuk, V. V.
Tverskoy, M. G.
机构：
[1] Russian Acad Sci, BP Konstantinov Nucl Phys Inst, Gatchina 188300, Leningrad Oblas, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2011年 / 37卷 / 01期
关键词：
Technical Physic Letter; Linear Energy Transfer; Gate Insulator; High Energy Proton; Oxide Film Thickness;
D O I：
10.1134/S1063785011010202
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of 1000-MeV protons on high-power metal-oxide-semiconductor field-effect transistors (MOSFETs) manufactured using microelectronic technology has been studied. It is established that high-energy proton bombardment leads to breakdown of the gate insulator (oxide) in the MOSFET structure that results in a "catastrophic" failure of the device. A model explaining the appearance of these failures is proposed that is based on the formation of fast residual particles as a result of nuclear reactions between high-energy protons and nuclei of the semiconductor material.
引用
收藏
页码：58 / 61
页数：4
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