Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices

被引：6

作者：

du Plessis, Monuko ^{[1
]}

Venter, Petrus J. ^{[1
]}

Bogalecki, Alfons W. ^{[2
]}

机构：

[1] Univ Pretoria, Carl & Emily Fuchs Inst Microelect, ZA-0002 Pretoria, South Africa

[2] INSiAVA Pty Ltd, ZA-0028 Pretoria, South Africa

来源：

SILICON PHOTONICS V | 2010年 / 7606卷

关键词：

Light emitting devices; reach-through diodes; quantum efficiency; P-N-JUNCTIONS; IMPACT IONIZATION; EMISSION; RATES;

D O I：

10.1117/12.840646

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For CMOS silicon-based light emitting devices to become practical the external power efficiency must be increased. In this paper a reach-through technique is described whereby the external power efficiency can be increased as a result of three phenomena: i) increase in internal quantum efficiency, ii) increase in light extraction efficiency, and iii) lower operating voltage. The three techniques are discussed and the factor 7 improvement in external power efficiency will be described in terms of the electrical characteristics as well as the external radiation patterns.

引用

页数：12

共 50 条

[1] Silicon light emitting devices in CMOS technology
Chen Hong-Da
Liu Hai-Jun
Liu Jin-Bin
Ming, Gu
Huang Bei-Ju
[J]. CHINESE PHYSICS LETTERS, 2007, 24 (01) : 265 - 267
[2] Optimized silicon CMOS reach-through avalanche photodiode with 2.3-GHz bandwidth
Steindl, Bernhard
Jukic, Tomislav
Zimmermann, Horst
[J]. OPTICAL ENGINEERING, 2017, 56 (11)
[3] A silicon light emitting devices in standard CMOS technology
Chen, HD
Sun, ZH
Liu, HJ
Gao, P
[J]. 2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 83 - 85
[4] Silicon light emitting devices in standard CMOS technology
du Plessis, M
Aharoni, H
Snyman, LW
[J]. 2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 231 - 238
[5] High efficiency light emitting devices in silicon
Castagna, ME
Coffa, S
Monaco, M
Muscara, A
Caristia, L
Lorenti, S
Messina, A
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 105 (1-3): : 83 - 90
[6] Higher efficiency silicon CMOS light emitting devices (450nm-750nm) using current density and carrier injection techniques
Snyman, LW
du Plessis, M
Aharoni, H
[J]. OPTOELECTRONIC INTEGRATION ON SILICON II, 2005, 5730 : 59 - 72
[7] Increased efficiency of silicon CMOS light emitting diodes
Snyman, LW
Aharoni, H
duPlessis, M
[J]. BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 562 - 565
[8] Improved silicon light emission for reach- and punch-through devices in standard CMOS
Venter, Petrus J.
du Plessis, Monuko
[J]. OPTOELECTRONIC INTERCONNECTS AND COMPONENT INTEGRATION IX, 2010, 7607
[9] Power efficiency estimation of silicon nanocrystals based light emitting devices in alternating current regime
Marconi, A.
Anopchenko, A.
Pucker, G.
Pavesi, L.
[J]. APPLIED PHYSICS LETTERS, 2011, 98 (20)
[10] External coupling efficiency in planar organic light-emitting devices
Lu, MH
Sturm, JC
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (13) : 1927 - 1929

← 1 2 3 4 5 →