Silicon light emitting devices in CMOS technology

被引：0

作者：

Chen Hong-Da ^{[1
]}

Liu Hai-Jun ^{[1
]}

Liu Jin-Bin ^{[1
]}

Ming, Gu ^{[1
]}

Huang Bei-Ju ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Two silicon light emitting devices with different structures are realized in standard 0.35 mu m complementary metal-oxide-semiconductor (CMOS) technology. They operate in reverse breakdown mode and can be turned on at 8.3 V. Output optical powers of 13.6 nW and 12.1 nW are measured at 10 V and 100 mA, respectively, and both the calculated light emission intensities are more than 1 mW/Cm-2. The optical spectra of the two devices are between 600-790 nm with a clear peak near 760 nm..

引用

页码：265 / 267

页数：3

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