Using reach-through techniques to improve the external power efficiency of silicon CMOS light emitting devices

被引：6
|
作者：
du Plessis, Monuko [1 ]
Venter, Petrus J. [1 ]
Bogalecki, Alfons W. [2 ]
机构：
[1] Univ Pretoria, Carl & Emily Fuchs Inst Microelect, ZA-0002 Pretoria, South Africa
[2] INSiAVA Pty Ltd, ZA-0028 Pretoria, South Africa
来源：
SILICON PHOTONICS V | 2010年 / 7606卷
关键词：
Light emitting devices; reach-through diodes; quantum efficiency; P-N-JUNCTIONS; IMPACT IONIZATION; EMISSION; RATES;
D O I：
10.1117/12.840646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For CMOS silicon-based light emitting devices to become practical the external power efficiency must be increased. In this paper a reach-through technique is described whereby the external power efficiency can be increased as a result of three phenomena: i) increase in internal quantum efficiency, ii) increase in light extraction efficiency, and iii) lower operating voltage. The three techniques are discussed and the factor 7 improvement in external power efficiency will be described in terms of the electrical characteristics as well as the external radiation patterns.
引用
收藏
页数：12
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