Power efficiency estimation of silicon nanocrystals based light emitting devices in alternating current regime

被引：11
|
作者：
Marconi, A. [1 ]
Anopchenko, A. [1 ]
Pucker, G. [2 ]
Pavesi, L. [1 ]
机构：
[1] Univ Trent, Dept Phys, Nanosci Lab, I-38123 Trento, Italy
[2] Bruno Kessler Fdn, Adv Photon & Photovolta Grp, I-38123 Trento, Italy
来源：
APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 20期
关键词：
D O I：
10.1063/1.3592566
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The power efficiency of silicon nanocrystal light-emitting devices is studied in alternating current (ac) regime. An experimental method based on impedance spectroscopy is proposed. The power efficiency in ac regime is higher than the one measured in direct current before a threshold frequency and decreases significantly for higher frequencies. This decrease is attributed to an increase in electrical power injected at high frequencies and it is directly related to the disordered microscopic structure of the active material. The proposed method can be applied for any kind of device for which it is possible to measure the impedance characteristic. (C) 2011 American Institute of Physics. [doi:10.1063/1.3592566]
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页数：3
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