DESIGN AND OPTIMIZATION OF LINEARLY GRADED FIELD LIMITING RING TERMINATION FOR HIGH-VOLTAGE SIC DIODES

被引：0
|
作者：
Deng, Xiaochuan [1 ]
Wen, Yi [1 ]
Wang, Xiangdong [1 ]
Wang, Yongwei [2 ]
Wang, Yong [2 ]
Yang, Fei [3 ]
Wu, Hao [3 ]
Zhang, Bo [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] ASIC, Natl Key Lab, Shijiazhuang 050051, Peoples R China
[3] State Grid Corp Fdn China, Beijing 100192, Peoples R China
来源：
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optimized linearly graded field limiting ring (LG-FLR) termination structure for high voltage power 4H-SiC diodes has been presented in this paper. Simulated optimized designs were performed to investigate SiC field limiting ring termination, and determine the optimum guard ring spacing for planar diodes. Simulated results show that the LG-FLR provides a smooth and uniform surface electric field distribution without field spikes. In addition, LG-FLR consumes smaller termination length than conventional FLR structures. Implanted 4H-SiC JBS diodes with optimized guard ring designs were fabricated and results correlated to simulation. Experimental breakdown values of 5 kV for LG-FLR structure with 35 rings were in good agreement with simulated results.
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页数：3
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