Analytical Drain Current Model for Graphene Metal-Oxide semiconductor Field-Effect Transistor

被引：0

作者：

Bardhan, Sudipta ^{[1
]}

Sahoo, Manodipan ^{[2
]}

Rahaman, Hafizur ^{[2
]}

机构：

[1] IIEST, Sch VLSI Technol, Howrah, India

[2] IIEST, Dept Informat Technol, Howrah, India

来源：

2015 2ND INTERNATIONAL CONFERENCE ON ELECTRICAL INFORMATION AND COMMUNICATION TECHNOLOGY (EICT) | 2015年

关键词：

graphene; field effect transistor; model; fitting parameters;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physics based analytical model for double gate metal oxide semiconductor graphene field effect transistor (GFET) has been presented. We have derived the expression of drain to source current using the general physics of conventional silicon MOSFET. The explicit expression of drain current is very simple and few fitting parameters have been considered to obtain the I-V characteristics. This model is also applicable for top gated GFET. Results using our analytical model show very good agreement with the experimental results and result using NANOHUB tool. This model can be integrated in circuit simulation tools.

引用

页码：422 / 427

页数：6

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