An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

被引：6

作者：

Zhang Li-Ning ^{[1
]}

He Jin ^{[1
,2
]}

Zhou Wang ^{[1
]}

Chen Lin ^{[1
]}

Xu Yi-Wen ^{[1
]}

机构：

[1] Peking Univ, Sch Elect Engn & Comp Sci, Minist Educ, Tera Scale Res Ctr,Key Lab Microelect Devices & C, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Res Ctr Micro & Nanodevice & Technol, Shenzhen 518055, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 04期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

core/shell; nanowire; nanowire MOSFET; SIMULATION;

D O I：

10.1088/1674-1056/19/4/047306

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper studies an oxide/silicon core/shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher I-on/I-off ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

引用

页数：4

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