An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

被引：0

作者：

张立宁 ^{[1
]}

何进 ^{[1
,2
]}

周旺 ^{[1
]}

陈林 ^{[1
]}

徐艺文 ^{[1
]}

机构：

[1] Tera-Scale Research Centre,Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education,School of Electronics Engineering and Computer Science,Peking University

[2] Research Centre of Micro-& Nano-Device and Technology,The Key Laboratory of Integrated Microsystems,Peking University Shenzhen Graduate School

来源：

Chinese Physics B | 2010年 / 19卷 / 04期

基金：

中国国家自然科学基金; 高等学校博士学科点专项科研基金;

关键词：

core/shell; nanowire; nanowire MOSFET;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper studies an oxide/silicon core/shell nanowire MOSFET(OS-CSNM).Through three-dimensional device simulations,we have demonstrated that the OS-CSNM has a lower leakage current and higher I on /I off ratio after introducing the oxide core into a traditional nanowire MOSFET(TNM).The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off,drain induced barrier lowering and subthreshold swing degradation.Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

引用

页码：400 / 403

页数：4

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