Monolithic CMOS readout for micromachined IR thermoelectric sensors: Modeling and characterization

CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and con-elated-double-sampling (CDs) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDs circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models leading to input referred noise of 0.5 mu V in a 300 Hz bandwidth.