Monolithic CMOS readout for micromachined IR thermoelectric sensors: Modeling and characterization

被引：0

作者：

Socher, E ^{[1
]}

Bochobza-Degani, O ^{[1
]}

Nemirovsky, Y ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Kidron Microelect Res Ctr, MEMS Grp, IL-32000 Haifa, Israel

来源：

SENSORS AND MICROSYSTEMS | 2000年

关键词：

D O I：

10.1142/9789812792013_0082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

CMOS readout for integrated thermoelectric sensors was modelled, designed and realized. Readout circuits based on DC-coupling and con-elated-double-sampling (CDs) technique were considered. The various noise contributions of the readout circuits were analysed and modelled. The effect of the CDs circuit of the noise of the sensor itself was also modelled. CMOS chips containing both IR sensors and readout circuits were realized and measurement results corroborate with the models leading to input referred noise of 0.5 mu V in a 300 Hz bandwidth.

引用

页码：475 / 479

页数：5

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