A novel spiral CMOS compatible micromachined thermoelectric IR microsensor

被引：19
|
作者：
Socher, E [1 ]
Bochobza-Degani, O [1 ]
Nemirovsky, Y [1 ]
机构：
[1] Technion Israel Inst Technol, Dept Elect Engn, Kidron Microelect Res Ctr, IL-32000 Haifa, Israel
来源：
JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2001年 / 11卷 / 05期
关键词：
D O I：
10.1088/0960-1317/11/5/320
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel sensing structure and realization method is proposed for complementary metal-oxide semiconductor (CMOS) compatible thermoelectric uncooled infrared microsensors. The structure enables high sensitivity and excellent thermal isolation in sensor pixels with small dimensions suitable for two-dimensional thermal imaging. Front-side dry micromachining allows fast CMOS post-processing, small pixel pitch and integration with on-chip CMOS readout. Prototype sensors with an area of 70 x 70 mum(2) achieved a measured noise equivalent power of 0.36 nW Hz(-1/2) and a response time of 3 ms.
引用
收藏
页码：574 / 576
页数：3
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