A novel spiral CMOS compatible micromachined thermoelectric IR microsensor

被引：19

作者：

Socher, E ^{[1
]}

Bochobza-Degani, O ^{[1
]}

Nemirovsky, Y ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, Kidron Microelect Res Ctr, IL-32000 Haifa, Israel

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2001年 / 11卷 / 05期

关键词：

D O I：

10.1088/0960-1317/11/5/320

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel sensing structure and realization method is proposed for complementary metal-oxide semiconductor (CMOS) compatible thermoelectric uncooled infrared microsensors. The structure enables high sensitivity and excellent thermal isolation in sensor pixels with small dimensions suitable for two-dimensional thermal imaging. Front-side dry micromachining allows fast CMOS post-processing, small pixel pitch and integration with on-chip CMOS readout. Prototype sensors with an area of 70 x 70 mum(2) achieved a measured noise equivalent power of 0.36 nW Hz(-1/2) and a response time of 3 ms.

引用

页码：574 / 576

页数：3

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