Interface effects in ferroelectric thin films

被引：0

作者：

Sternberg, A ^{[1
]}

Zauls, V ^{[1
]}

Tyunina, M ^{[1
]}

Liberts, G ^{[1
]}

Kundzinsh, M ^{[1
]}

Calzada, L ^{[1
]}

Alguero, M ^{[1
]}

Pardo, L ^{[1
]}

Kosec, M ^{[1
]}

Kullmer, R ^{[1
]}

Bäuerle, D ^{[1
]}

机构：

[1] Latvian State Univ, Inst Solid State Phys, LV-1063 Riga, Latvia

来源：

INTERFACIAL SCIENCE IN CERAMIC JOINING | 1998年 / 58卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Dielectric, ferroelectric and piezoelectric characteristics in sol-gel derived and pulsed laser deposited (PLD) lead zirconate titanate (PZT), La modified lead titanate (PLT) and zirconate titanate (PLZT) ferroelectric thin films are investigated focusing on maintenance of thin film ferroelectric (FE) properties in a variety of thin film-electrode-substrate interfaces. Interferometric studies of piezoelectric response of the heterostructures were performed with respect to a DC electrical bias and AC measurement frequency. The asymmetry of piezoelectric coefficient (d(33)) hysteresis, diminished values of d(33), frequency-displacement and spot size - deformation behaviour in the ferroelectric heterostructures were attributed to residual stress at the film-substrate interfaces and unrelaxed strain, characteristic in highly oriented FE thin films. Sol-gel derived PLT-8 and PLT-20 samples demonstrate relatively large displacement vs. electric field d(33) values exceeding 80-100 pm/V at 1 kHz increasing with the decrease in the measurement frequency.

引用

页码：457 / 464

页数：8

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