Interface effects on highly epitaxial ferroelectric thin films

被引：0
|
作者：
Y. Lin
C. L. Chen
机构：
[1] University of Electronic Science & Technology of China,State Key Laboratory of Electronic Thin Films and Integrated Devices
[2] University of Texas at San Antonio,Department of Physics and Astronomy
来源：
Journal of Materials Science | 2009年 / 44卷
关键词：
BaTiO3; Edge Dislocation; Select Area Electron Diffraction Pattern; Misfit Dislocation; Barium Strontium Titanate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Interface effects have been found to play a key role in controlling the epitaxial nature and physical properties on the highly epitaxial ferroelectric thin films. Thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations. The natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in this article.
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页码：5274 / 5287
页数：13
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