Interface effects on highly epitaxial ferroelectric thin films

被引：31
|
作者：
Lin, Y. [2 ]
Chen, C. L. [1 ]
机构：
[1] Univ Texas San Antonio, Dept Phys & Astron, San Antonio, TX 78249 USA
[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE | 2009年 / 44卷 / 19期
基金：
美国国家科学基金会;
关键词：
MISFIT RELAXATION MECHANISMS; DIELECTRIC-PROPERTIES; THICKNESS DEPENDENCE; LEAD TITANATE; PIEZOELECTRIC BEHAVIOR; DOMAIN CONFIGURATIONS; THERMODYNAMIC THEORY; INTERNAL-STRESSES; PHASE-DIAGRAMS; STRAIN;
D O I：
10.1007/s10853-009-3664-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Interface effects have been found to play a key role in controlling the epitaxial nature and physical properties on the highly epitaxial ferroelectric thin films. Thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations. The natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in this article.
引用
收藏
页码：5274 / 5287
页数：14
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