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Electret effects in ferroelectric thin films

被引：0
|
作者：
Scott, JF [1 ]
Zubko, P [1 ]
机构：
[1] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
来源：
12TH INTERNATIONAL SYMPOSIUM ON ELECTRETS (ISE 12), PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A summary is given of probable electret effects in lead zirconate titanate (PZT), strontium titanate, polyvinylidene fluoride (PVDF), and ZnO:Li. Effects in capacitors in thin-film ferroelectric random access memories (FRAMs) such as imprint, retention, and fatigue can involve electret mechanisms and are exacerbated with radiation damage.
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页码：113 / 116
页数：4
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