Electrical measurement of the bandgap of N+ and P+ SiGe formed by Ge ion implantation

被引：0

作者：

Nishiyama, A ^{[1
]}

Arisumi, O ^{[1
]}

Yoshimi, M ^{[1
]}

机构：

[1] Toshiba Co Ltd, Adv Semicond Devices Res Labs, R&D Ctr, Isogo Ku, Yokohama, Kanagawa 235, Japan

来源：

ELECTRICALLY BASED MICROSTRUCTURAL CHARACTERIZATION II | 1998年 / 500卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

N+ and p(+) SiGe layers were formed in the source regions of SOI MOSFETs in order to suppress the floating-body effects by means of high-dose Ge implantation. The bandgaps of the layers were evaluated by measuring the temperature dependence of the base current of the source/channel/drain lateral bipolar transistors. It has been found that the reductions of the bandgaps due to the SiGe formation by the Ge implantation were relatively small, compared to those obtained by the theoretical calculation for heavily doped SiGe. It was also found that the bandgap reduction was larger for n(+) layers than that for p(+) layers.

引用

页码：69 / 74

页数：6

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