Synthesis of SiGe and SiGeC alloys formed by Ge and C implantation

被引：9
|
作者：
Lu, XA
Cheung, NW
机构：
[1] Electronics Research Laboratory, University of California, Berkeley
来源：
APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 13期
关键词：
D O I：
10.1063/1.117620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, near surface SiGe and SiGeC alloys with germanium peak composition up to 16 at.% were formed using high-dose ion implantation and subsequent solid phase epitaxial growth. Rutherford backscattering spectroscopy (RBS) channeling spectra and cross-sectional transmission electron microscopy (XTEM) studies showed that high quality Si0.92Ge0.08 and Si0.91Ge0.08C0.01 crystals were formed at the Si surface, while Si0.84Ge0.16 and Si0.82Ge0.16C0.02 layers had extended defects. X-ray diffraction experiments demonstrated that carbon could reduce the lattice strain in SiGe alloys but without significant crystal quality improvement as detected by RES channeling spectra or XTEM observations. (C) 1996 American Institute of Physics.
引用
收藏
页码：1915 / 1917
页数：3
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