Joining Si3N4-based ceramics with oxidation-formed surface layers

被引:6
|
作者
Plucknett, KP [1 ]
机构
[1] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
关键词
D O I
10.1111/j.1151-2916.2000.tb01662.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple processing technique has been developed for joining Si3N4,-based ceramics. Thin (<5 <mu>m thick), amorphous, or partially crystalline SiO2-based surface layers were formed, via low-temperature oxidation (at 1200 degreesC), on the faces to be joined. Joining of the surface-coated pieces could then be performed in an inert environment at typical sintering/joining temperatures (i,e., 1700 degreesC), with or without applied gas pressure, via a transient viscous/liquid phase. This method was most effective for Si3N4 ceramics with single oxide sintering additives when a thin (similar to1 mum thick), highly smooth (RMS roughness <60 nm) SiO2 layer was formed, and essentially 'pore-free' joints could be formed. However, the method was less suitable for a multi additive SiAlON material under current experimental conditions, as relatively high roughness (RMS roughness >400 nm) oxide scales formed, leaving residual porosity at the joint interface.
引用
收藏
页码:2925 / 2928
页数:4
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