A novel 8T SRAM cell with improved read-SNM

被引：0

作者：

Sil, Abhijit ^{[1
]}

Ghosh, Soumik ^{[1
]}

Bayoumi, Magdy ^{[1
]}

机构：

[1] Univ Louisiana Lafayette, Ctr Adv Comp Studies, Lafayette, LA 70504 USA

来源：

2007 IEEE NORTH-EAST WORKSHOP ON CIRCUITS AND SYSTEMS | 2007年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

As the MOSFET's channel length is scaling down, SRAM stability becomes the major concern for future technology. The cell becomes more susceptible to both process induced variation in device geometry and threshold voltage variability due to dopant fluctuation in the channel region. In this paper, a novel highly stable 8T SRAM cell is proposed which eliminate any noise induction during read operation and keep the Read SNM as high as 468mV at V-DD = 1.2 V in 120nm technology. The cell also supports low power operation at Cell VDD as low as 0.34V. This new asymmetric cell structure is capable of using differential sense technique for high speed read operation.

引用

页码：253 / 256

页数：4

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