40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology

被引：4
|
作者：
Konczykowska, A
Riet, M
Berdaguer, P
Bove, P
Kahn, M
Godin, J
机构：
[1] Alcatel Thales III V Lab, F-91461 Marcoussis, France
[2] Picogiga Int, F-91971 Courtaboeuf, France
来源：
ELECTRONICS LETTERS | 2005年 / 41卷 / 16期
关键词：
D O I：
10.1049/el:20051546
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A circuit-oriented InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) technology has been developed, and used to fabricate a 40 Gbit/s full-rate digital circuit (a 40 GHz-clocked D-FF). The high yield achieved demonstrates the whole process (epitaxy, technology) quality.
引用
收藏
页码：905 / 906
页数：2
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