80Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

被引：2
|
作者：
Otsuji, T
Murata, K
Enoki, T
Umeda, Y
机构：
[1] NTT, Opt Network Syst Labs, Kanagawa 24301, Japan
[2] NTT, Syst Elect Labs, Kanagawa 24301, Japan
来源：
ELECTRONICS LETTERS | 1998年 / 34卷 / 01期
关键词：
D O I：
10.1049/el:19980001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report an 80Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double-layer interconnection process with a low-permittivity insulator. The record operating data rate was measured on a 3in wafer. In spite of the bandwidth limitation on the measurement setup, clear eye patterns were successfully observed for the fist time.
引用
收藏
页码：113 / 114
页数：2
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