Carrier lifetime extraction in fully depleted dual-gate SOI devices

被引：6
|
作者：
Ernst, T
Vandooren, A
Cristoloveanu, S
Colinge, JP
Flandre, D
机构：
[1] ST Microelect, F-38920 Crolles, France
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
[3] Univ Catholique Louvain, Microelect Lab, B-1348 Louvain, Belgium
[4] ENSERG, UMR 5531, Lab Phys Composants Semiconduct, F-38016 Grenoble, France
来源：
IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 05期
关键词：
carrier lifetime; leakage currents; MOS devices; silicon-on-insulator technology; SIMOX;
D O I：
10.1109/55.761017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new method for;extracting the carrier recombination lifetime in dual-gate silicon-on-insulator (SOI) structures is proposed. The experiment, model, and numerical simulations indicate that an excess forward current is obtained when carrier recombination occurs in the whole film volume.
引用
收藏
页码：209 / 211
页数：3
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