Memory operations of 1T2C-type ferroelectric memory cell with excellent data retention characteristics

被引：43
|
作者：
Yoon, SM [1 ]
Ishiwara, H
机构：
[1] R&D Assoc Future Electron Devices, Tokyo 1100014, Japan
[2] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Yokohama, Kanagawa 2268503, Japan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 09期
关键词：
data retention; depolarization field; ferroelectric-gate FET; ferroelectric memory; 1T2C; SrBi2Ta2O9;
D O I：
10.1109/16.944189
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel FET-type ferroelectric memory cell with one-transistor, and two-capacitor (1T2C) structure was fabricated and characterized, in which the generation of depolarization field in ferroelectric film during data retention was suppressed by polarizing two ferroelectric capacitors in opposite directions. It was demonstrated that the stored data were nondestructively read-out and their retention time was much longer than that of conventional ferroelectric-gate FET.
引用
收藏
页码：2002 / 2008
页数：7
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