1T1C FeRAM Memory Array Based on Ferroelectric HZO with Capacitor under Bitline

被引：0
|
作者：
Okuno, Jun [1 ]
Kunihiro, Takafumi [1 ]
Konishi, Kenta [1 ]
Materano, Monica [2 ]
Ali, Tarek [3 ]
Kuehnel, Kati [3 ]
Seidel, Konrad [3 ]
Mikolajick, Thomas [2 ,4 ]
Schroeder, Uwe [2 ]
Tsukamoto, Masanori [1 ]
Umebayashi, Taku [1 ]
机构：
[1] Sony Semiconductor Solutions Corporation, Atsugi,243-0014, Japan
[2] NaMLab GGmbH, Dresden,01187, Germany
[3] Center Nanoelectronics Technologies, Fraunhofer Ipms, Dresden,01099, Germany
[4] Ihm, Tu Dresden, Dresden,01062, Germany
来源：
IEEE Journal of the Electron Devices Society | 2022年 / 10卷
关键词：
Metals - Memory architecture - Metallizing - Annealing - Ferroelectricity - System-on-chip - Zirconium compounds;
D O I：
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学科分类号：
摘要：
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页码：29 / 34
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