1T1C FeRAM Memory Array Based on Ferroelectric HZO with Capacitor under Bitline

被引：0

作者：

Okuno, Jun ^{[1
]}

Kunihiro, Takafumi ^{[1
]}

Konishi, Kenta ^{[1
]}

Materano, Monica ^{[2
]}

Ali, Tarek ^{[3
]}

Kuehnel, Kati ^{[3
]}

Seidel, Konrad ^{[3
]}

Mikolajick, Thomas ^{[2
,4
]}

Schroeder, Uwe ^{[2
]}

Tsukamoto, Masanori ^{[1
]}

Umebayashi, Taku ^{[1
]}

机构：

[1] Sony Semiconductor Solutions Corporation, Atsugi,243-0014, Japan

[2] NaMLab GGmbH, Dresden,01187, Germany

[3] Center Nanoelectronics Technologies, Fraunhofer Ipms, Dresden,01099, Germany

[4] Ihm, Tu Dresden, Dresden,01062, Germany

来源：

IEEE Journal of the Electron Devices Society | 2022年 / 10卷

关键词：

Metals - Memory architecture - Metallizing - Annealing - Ferroelectricity - System-on-chip - Zirconium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：29 / 34

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