Growth of InGaAs nanowires by selective-area metalorganic vapor phase epitaxy

被引：42

作者：

Sato, Takuya ^{[1
,2
]}

Motohisa, Junichi ^{[2
]}

Noborisaka, Jinichiro ^{[1
,2
]}

Hara, Shinjiro ^{[1
,2
]}

Fukui, Takashi ^{[1
,2
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 7-9期

关键词：

nanostructures; metalorganic vapor phase epitaxy; selective epitaxy; semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2007.12.048

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metal organic vapor phase epitaxy (SA-MOVPE). It was found that the initial growth rate of the nanowires depends on the supply ratio of source gas of Ga and In, and it is higher for increasing supply ratio of Ga. At the initial stage, the diameters of the nanowires were almost the same as those of the openings of the mask, indicating that the lateral growth was negligible, while the height of the nanowires increased superlinearly with time. For longer growth time, the diameter of nanowires as well as height increased linearly with time. A possible growth mechanism for such dependence on time and supply ratio of group III source gases is discussed. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：2359 / 2364

页数：6

共 50 条

[21] Micro-photoluminescence spectroscopy study of high-quality InP nanowires grown by selective-area metalorganic vapor phase epitaxy
Kobayashi, Yasunori
Fukul, Masayasu
Motohisa, Junichi
Fukui, Takashi
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 2204 - 2206
[22] Lateral thickness modulation of InGaAs layers on GaAs in selective area metalorganic vapor phase epitaxy
Terasawa, T
Nakajima, F
Motohisa, J
Fukui, T
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (04) : 523 - 527
[23] Control of composition and morphology in InGaAs nanowires grown by metalorganic vapor phase epitaxy
Wu, Jun
Borg, B. Mattias
Jacobsson, Daniel
Dick, Kimberly A.
Wernersson, Lars-Erik
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 383 : 158 - 165
[24] Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy
Hiramatsu, K
Matsushima, H
Shibata, T
Kawagachi, Y
Sawaki, N
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 104 - 111
[25] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
Goto, Hajime
Nosaki, Katsutoshi
Tomioka, Katsuhiro
Hara, Shinjiro
Hiruma, Kenji
Motohisa, Junichi
Fukui, Takashi
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (03)
[26] Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy
Kelrich, A.
Calahorra, Y.
Greenberg, Y.
Gavrilov, A.
Cohen, S.
Ritter, D.
[J]. NANOTECHNOLOGY, 2013, 24 (47)
[27] Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
Noborisaka, J
Motohisa, J
Hara, S
Fukui, T
[J]. APPLIED PHYSICS LETTERS, 2005, 87 (09)
[28] Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy
Cantoro, M.
Brammertz, G.
Richard, O.
Bender, H.
Clemente, F.
Leys, M.
Degroote, S.
Caymax, M.
Heyns, M.
De Gendt, S.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (11) : H860 - H868
[29] A DIFFUSION-MODEL FOR SELECTIVE-AREA EPITAXY BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
KORGEL, B
HICKS, RF
[J]. JOURNAL OF CRYSTAL GROWTH, 1995, 151 (1-2) : 204 - 212
[30] Selective-Area Growth of Vertical InGaAs Nanowires on Ge for Transistor Applications
Yoshida, Akinobu
Tomioka, Katsuhiro
Ishizaka, Fumiya
Chiba, Kohei
Motohisa, Junichi
[J]. SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 14, 2016, 75 (05): : 265 - 270

← 1 2 3 4 5 →