Shadowing and mask opening effects during selective-area vapor-liquid-solid growth of InP nanowires by metalorganic molecular beam epitaxy

被引：29
|
作者：
Kelrich, A. [1 ]
Calahorra, Y. [1 ]
Greenberg, Y. [1 ]
Gavrilov, A. [1 ]
Cohen, S. [1 ]
Ritter, D. [1 ]
机构：
[1] Technion Israel Inst Technol, Fac Elect Engn, IL-32000 Haifa, Israel
来源：
NANOTECHNOLOGY | 2013年 / 24卷 / 47期
关键词：
SEMICONDUCTOR NANOWIRES; MECHANISM; MOVPE;
D O I：
10.1088/0957-4484/24/47/475302
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Indium phosphide nanowires were grown by metalorganic molecular beam epitaxy using the selective-area vapor-liquid-solid method. We show experimentally and theoretically that the size of the annular opening around the nanowire has a major impact on nanowire growth rate. In addition, we observed a considerable reduction of the growth rate in dense two-dimensional arrays, in agreement with a calculation of the shadowing of the scattered precursors. Due to the impact of these effects on growth, they should be considered during selective-area vapor-liquid-solid nanowire epitaxy.
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页数：7
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