Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy

被引：194

作者：

Goto, Hajime ^{[1
]}

Nosaki, Katsutoshi ^{[1
]}

Tomioka, Katsuhiro ^{[2
,3
]}

Hara, Shinjiro ^{[2
,3
]}

Hiruma, Kenji ^{[2
,3
]}

Motohisa, Junichi ^{[2
,3
]}

Fukui, Takashi ^{[2
,3
]}

机构：

[1] Honda Res & Dev Co Ltd, Fundamental Technol Res Ctr, Wako, Saitama 3510193, Japan

[2] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0608628, Japan

[3] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 03期

关键词：

SOLAR-CELLS; SEMICONDUCTOR NANOWIRES; SINGLE; ARRAYS; MOVPE;

D O I：

10.1143/APEX.2.035004

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the formation of core-shell pn junction InP nanowires using a catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) method. A periodically aligned dense core-shell InP nanowire array was fabricated and used in photovoltaic device applications. The device exhibited open-circuit voltage (V-OC), short-circuit current (I-SC) and fill factor (FF) levels of 0.43 V, 13.72 mA/cm(2) and 0.57, respectively, which indicated a solar power conversion efficiency of 3.37% under AM1.5G illumination. This study demonstrates that high quality core-shell structure nanowire fabrication is possible by SA-MOVPE and that the nanowire arrays can be used in integrated nanowire photovoltaic devices. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.035004

引用

页数：3

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