Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy

被引：1

作者：

Halder, Nripendra N. ^{[1
]}

Kelrich, Alexander ^{[1
]}

Kauffmann, Yaron ^{[2
]}

Cohen, Shimon ^{[1
]}

Ritter, Dan ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Fac Elect Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel

来源：

JOURNAL OF CRYSTAL GROWTH | 2017年 / 463卷

关键词：

A1. Crystal structure; A1; Nanostructures; A3. Metalorganic molecular beam epitaxy; A3; Phosphides; B2. Semiconducting gallium compounds; B2. Semiconducting III-V materials; B2. Semiconducting indium phosphide; HETEROSTRUCTURES;

D O I：

10.1016/j.jcrysgro.2017.02.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the selective area vapor-liquid-solid (SA-VLS) growth of InP/GaP core shell nano-wires (NWs) by metal organic molecular beam epitaxy. Wurtzite crystal structure of the core InP was transferred to the GaP shell through layer by layer radial growth which eliminated bending of the NWs in random directions. Low growth temperature restricted surface segregation and kept the shell free from indium. Strain in the GaP shell was partially relaxed through formation of periodic misfit dislocations. From the periodicity of Moire fringes and splitting of the fast-Fourier-transform of the transmission electron micrographs, the radial and axial strain were determined as 4.5% and 6.2%, respectively. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：10 / 13

页数：4

共 50 条

[1] Wurtzite GaAs/AlGaAs core-shell nanowires grown by molecular beam epitaxy
Zhou, H. L.
Hoang, T. B.
Dheeraj, D. L.
van Helvoort, A. T. J.
Liu, L.
Harmand, J. C.
Fimland, B. O.
Weman, H.
[J]. NANOTECHNOLOGY, 2009, 20 (41)
[2] Growth of wurtzite GaP in InP/GaP core-shell nanowires by selective-area MOVPE
Ishizaka, Fumiya
Hiraya, Yoshihiro
Tomioka, Katsuhiro
Fukui, Takashi
[J]. JOURNAL OF CRYSTAL GROWTH, 2015, 411 : 71 - 75
[3] Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
Goto, Hajime
Nosaki, Katsutoshi
Tomioka, Katsuhiro
Hara, Shinjiro
Hiruma, Kenji
Motohisa, Junichi
Fukui, Takashi
[J]. APPLIED PHYSICS EXPRESS, 2009, 2 (03)
[4] Incorporation of Be dopant in GaAs core and core-shell nanowires by molecular beam epitaxy
Ojha, Sai Krishna
Kasanaboina, Pavan Kumar
Reynolds, Claude Lewis, Jr.
Rawdanowicz, Thomas A.
Liu, Yang
White, Ryan M.
Iyer, Shanthi
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
[5] InGaAs/GaAs Core-Shell Nanowires Grown by Molecular Beam Epitaxy
Jabeen, Fauzia
Grillo, Vincenzo
Martelli, Faustino
Rubini, Silvia
[J]. IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2011, 17 (04) : 794 - 800
[6] GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy
Himwas, C.
Yordsri, V
Thanachayanont, C.
Tchernycheva, M.
Panyakeow, S.
Kanjanachuchai, S.
[J]. NANOTECHNOLOGY, 2022, 33 (09)
[7] Molecular Beam Epitaxy Growth of GaAs/InAs Core-Shell Nanowires and Fabrication of InAs Nanotubes
Rieger, Torsten
Luysberg, Martina
Schaepers, Thomas
Gruetzmacher, Detlev
Lepsa, Mihail Ion
[J]. NANO LETTERS, 2012, 12 (11) : 5559 - 5564
[8] Ferromagnetic GaAS/GaMnAS Core-Shell Nanowires Grown by Molecular Beam Epitaxy
Rudolph, Andreas
Soda, Marcello
Kiessling, Matthias
Wojtowicz, Tomasz
Schuh, Dieter
Wegscheider, Werner
Zweck, Josef
Back, Christian
Reiger, Elisabeth
[J]. NANO LETTERS, 2009, 9 (11) : 3860 - 3866
[9] Origin of Spontaneous Core-Shell AIGaAs Nanowires Grown by Molecular Beam Epitaxy
Dubrovskii, V. G.
Shtrom, I. V.
Reznik, R. R.
Samsonenko, Yu. B.
Khrebtov, A. I.
Soshnikov, I. P.
Rouvimov, S.
Akopian, N.
Kasama, T.
Cirlin, G. E.
[J]. CRYSTAL GROWTH & DESIGN, 2016, 16 (12) : 7251 - 7255
[10] GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy
Li, Lixia
Pan, Dong
So, Hyok
Wang, Xiaolei
Yu, Zhifeng
Zhao, Jianhua
[J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 724 : 659 - 665

← 1 2 3 4 5 →