Effect of interdiffusion on the band structure and absorption coefficient of a one-dimensional semiconductor superlattice

被引：0

作者：

Aghchegala, V. L. Aziz ^{[1
]}

机构：

[1] Yerevan State Univ, Yerevan 375049, Armenia

来源：

JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2011年 / 46卷 / 02期

关键词：

semiconductor superlattice; interdiffusion; band structure; absorption coefficient; quantum wells; Wood-Saxon potential; INAS QUANTUM DOTS; DIFFUSION; PROBE;

D O I：

10.3103/S106833721102006X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The effect of interdiffusion of Al and Ga atoms on the confining potential, band structure and absorption coefficient of electromagnetic radiation of a one-dimensional superlattice, composed of GaAs/Ga(1-x) Al (x) As quantum wells with the initially rectangular potential profile, is studied within the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the widening of the energy minibands and to the blueshift of the absorption spectrum observed in experiments.

引用

页码：80 / 85

页数：6

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