Effect of interdiffusion on the band structure and absorption coefficient of a one-dimensional semiconductor superlattice

被引：0
|
作者：
Aghchegala, V. L. Aziz [1 ]
机构：
[1] Yerevan State Univ, Yerevan 375049, Armenia
来源：
JOURNAL OF CONTEMPORARY PHYSICS-ARMENIAN ACADEMY OF SCIENCES | 2011年 / 46卷 / 02期
关键词：
semiconductor superlattice; interdiffusion; band structure; absorption coefficient; quantum wells; Wood-Saxon potential; INAS QUANTUM DOTS; DIFFUSION; PROBE;
D O I：
10.3103/S106833721102006X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of interdiffusion of Al and Ga atoms on the confining potential, band structure and absorption coefficient of electromagnetic radiation of a one-dimensional superlattice, composed of GaAs/Ga(1-x) Al (x) As quantum wells with the initially rectangular potential profile, is studied within the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the widening of the energy minibands and to the blueshift of the absorption spectrum observed in experiments.
引用
收藏
页码：80 / 85
页数：6
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