Effect of interdiffusion on the band structure and absorption coefficient of a one-dimensional semiconductor superlattice

被引：0

作者：

V. L. Aziz Aghchegala

机构：

[1] Yerevan State University,

来源：

Journal of Contemporary Physics (Armenian Academy of Sciences) | 2011年 / 46卷

关键词：

semiconductor superlattice; interdiffusion; band structure; absorption coefficient; quantum wells; Wood-Saxon potential;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of interdiffusion of Al and Ga atoms on the confining potential, band structure and absorption coefficient of electromagnetic radiation of a one-dimensional superlattice, composed of GaAs/Ga1−xAlxAs quantum wells with the initially rectangular potential profile, is studied within the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the widening of the energy minibands and to the blueshift of the absorption spectrum observed in experiments.

引用

页码：80 / 85

页数：5

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