Pulsed laser deposition of aluminum nitride thin films for FBAR applications

被引:24
|
作者
Cibert, C.
Chatras, M.
Champeaux, C.
Cros, D.
Catherinot, A.
机构
[1] Univ Limoges, Fac Sci & Tech, CNRS, UMR N 6638,SPCTS, F-87060 Limoges, France
[2] Univ Limoges, Fac Sci & Tech, CNRS, UMR N 6172,XLIM, F-87060 Limoges, France
关键词
aluminum nitride; pulsed laser deposition; film bulk acoustic wave resonator;
D O I
10.1016/j.apsusc.2007.02.124
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Aluminum nitride thin films have been deposited by pulsed laser deposition on fused silica, Si (1 0 0) and Mo(1 1 0)-coated Si substrates. FTIR measurements show that only pure AIN phase is present in films, confirmed by UV-V spectroscopy where a strong absorption peak occurs at 206 nm, characteristic of AIN. C-axis oriented films have been obtained at a temperature of 800 degrees C on Si (1 0 0) substrate, and at a temperature of 200 degrees C on Mo(1 1 0)-coated Si substrates. AFM experiments show that AIN film surface is very smooth (3.0 nm rms) without any particulate and droplet. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:8151 / 8154
页数:4
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