Pulsed laser deposition of aluminum nitride thin films for FBAR applications

被引：24

作者：

Cibert, C.

Chatras, M.

Champeaux, C.

Cros, D.

Catherinot, A.

机构：

[1] Univ Limoges, Fac Sci & Tech, CNRS, UMR N 6638,SPCTS, F-87060 Limoges, France

[2] Univ Limoges, Fac Sci & Tech, CNRS, UMR N 6172,XLIM, F-87060 Limoges, France

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 19期

关键词：

aluminum nitride; pulsed laser deposition; film bulk acoustic wave resonator;

D O I：

10.1016/j.apsusc.2007.02.124

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Aluminum nitride thin films have been deposited by pulsed laser deposition on fused silica, Si (1 0 0) and Mo(1 1 0)-coated Si substrates. FTIR measurements show that only pure AIN phase is present in films, confirmed by UV-V spectroscopy where a strong absorption peak occurs at 206 nm, characteristic of AIN. C-axis oriented films have been obtained at a temperature of 800 degrees C on Si (1 0 0) substrate, and at a temperature of 200 degrees C on Mo(1 1 0)-coated Si substrates. AFM experiments show that AIN film surface is very smooth (3.0 nm rms) without any particulate and droplet. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：8151 / 8154

页数：4

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