Aluminum nitride thin films grown by plasma-assisted pulsed laser deposition

被引：7
|
作者：
Ogawa, T
Okamoto, M
Mori, Y
Sasaki, T
机构：
[1] Department of Electrical Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
D O I：
10.1016/S0169-4332(96)00827-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Oriented (0002) AlN thin films have been grown on Si(100) substrate by plasma-assisted pulsed laser deposition technique from sintering AlN target. The full width at half maximum (FWHM) value of (0002) X-ray diffraction peak was 0.60 degrees in the 2 theta/theta scan mode for AlN films grown in nitrogen plasma ambient at 800 degrees C. Cathodoluminescence study revealed the effect of growth environments on optical property of AlN films.
引用
收藏
页码：57 / 60
页数：4
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