Pulsed laser deposition of oriented aluminum nitride thin films and their application

被引:0
|
作者
Meinschien, J [1 ]
Falk, F [1 ]
Stafast, H [1 ]
机构
[1] Inst Phys Hochtechnol EV, DE-07702 Jena, Germany
关键词
optical wave guide; pulsed laser deposition; surface acoustic waves;
D O I
10.4028/www.scientific.net/MSF.338-342.1523
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Pulsed laser deposition was applied to prepare aluminum nitride films of up to 1250 nm thickness onto c- or r- cut sapphire substrates with (00.1) or (11.0) orientation, respectively. X-ray diffraction goniometry revealed a preferential in-plane alignment of the AIN crystals. First experiments on several potential applications are presented where orientation dependent properties of AIN are significant. A r.f. delay line based on surface acoustic waves in AlN(11.0) generated along the AlN c-axis was fabricated. Silicon carbide films were grown on AlN predeposited sapphire substrates. Optical wave guiding was demonstrated in an AlN film.
引用
收藏
页码:1523 / 1526
页数:4
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