Study on the spin polarization of a current through a hybrid resonant tunneling diode

被引：0

作者：

Li, Ming Kai ^{[2
]}

Kang, Tae Won ^{[2
]}

Kim, Nammee ^{[1
]}

机构：

[1] Soongsil Univ, Dept Phys, Seoul 156743, South Korea

[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2010年 / 247卷 / 07期

关键词：

diluted magnetic semiconductors; resonant tunneling devices; spin polarized transport; INJECTION; ZNO; LI;

D O I：

10.1002/pssb.201000007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effects of spin-splitting energy and temperature on the electric transport properties through a hybrid resonant tunneling diode (RTD) with ferroelectric barriers and a diluted magnetic semiconductor (DMS) quantum well are Studied by using the non-equilibrium, Green's function method: The results, show that the period:Of:Spin polarization oscillation as a function of a bias voltage increases by increasing the spin-splitting energy of the DMS quantum well. The spin polarization of the current near the Fermi level is highly influenced by a change in temperature. The RTD with a ferromagnetic quantum well is more efficient than that with a ferromagnetic emitter to manipulate the spin direction of the current and to enhance the spin polarization of the current without changing the direction of an external magnetic field. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1786 / 1790

页数：5

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