Electron spin polarization in resonant interband tunneling devices

We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaxMn1-xSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the light-hole resonant channel. High densities of the spin-polarized electrons injected into bulk InAs make spin-resonant tunneling devices a viable alternative for injecting spins into a semiconductor. Another striking feature of the proposed devices is the possibility of inducing additional resonant channels corresponding to the heavy holes. This can be implemented by saturating the in-plane magnetization in the quantum well.