Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

被引：0
|
作者：
Fujita, Maganari [1 ]
Saito, Mitsufumi [1 ]
Suhara, Michihiko [1 ]
机构：
[1] Tokyo Metropolitan Univ, Hachioji, Tokyo 1920397, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2012年 / E95C卷 / 05期
关键词：
spintronics; spin-splitting; RTD; InSb/AlInSb; Rashba effect; INSB THIN-FILMS; ORBIT INTERACTION; QUANTUM-WELLS; MAGNETORESISTANCE; HETEROSTRUCTURE; FILTER;
D O I：
10.1587/transele.E95.C.871
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we analyze current-voltage characteristics of InSb/AlInSb triple-barrier resonant tunneling diodes (TBRTDs) with spin-splitting under zero magnetic fields. The InSb has very small effective mass, thus we can obtain large spin-splitting by Rashba spin-orbit interaction due to asymmetric InSb/AlInSb quantum wells. In our model, broadening of each resonant tunneling level and spin-splitting energy can be considered to calculate spin-polarized resonant tunneling current.
引用
收藏
页码：871 / 878
页数：8
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