Photoinduced spin-polarized current in InSb-based structures

被引：13

作者：

Frazier, M. ^{[1
]}

Cates, J. G. ^{[1
]}

Waugh, J. A. ^{[1
]}

Heremans, J. J. ^{[1
]}

Santos, M. B. ^{[2
]}

Liu, X. ^{[3
]}

Khodaparast, G. A. ^{[1
]}

机构：

[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA

[2] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 10期

关键词：

BALLISTIC TRANSPORT;

D O I：

10.1063/1.3262496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the observation of spin-polarized photocurrent in InSb films grown on GaAs and InP substrates and InSb quantum wells where a nonequilibrium spin population has been achieved by using circularly polarized radiation. The characteristics of our observations indicated that the circular photo galvanic effect could be responsible for the generation of the photocurrents. (C) 2009 American Institute of Physics. [doi:10.1063/1.3262496]

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页数：5

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